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PMD9050D
MOSFET driver
Rev. 01 -- 27 November 2006 Product data sheet
1. Product profile
1.1 General description
NPN transistor and high-speed switching diode supplemented by an NPN/PNP transistor pair connected as a silicon-controlled switch in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I I I I I I General-purpose transistor and high-speed switching diode as driver Silicon-controlled switch to bypass the driver transistor Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count
1.3 Applications
I MOSFET driver with silicon-controlled switch
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM Diode (D1) IF VF VR
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp 1 ms Conditions open base Min Typ Max 45 0.1 0.2 Unit V A A
Per transistor; for the PNP transistor with negative polarity
forward current forward voltage reverse voltage
Pulse test: tp 300 s; 0.02.
IF = 200 mA
[1]
-
0.2 1.1 60
A V V
-
NXP Semiconductors
PMD9050D
MOSFET driver
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Symbol IN OUT RC GND ON OFF Description input output collector resistor ground output enable output disable
1 2 1 2 3
TR2 TR1 D1
Simplified outline
6 5 4
Symbol
6 5
TR3
4
3
006aaa654
3. Ordering information
Table 3. Ordering information Package Name PMD9050D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code 9G Type number PMD9050D
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
2 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Diode (D1) VRRM VR IF IFRM IFSM repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current tp 1 ms; = 0.25 square wave tp 1 s tp 100 s tp 10 ms Device Ptot Tj Tamb Tstg
[1] [2]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current
Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms
Min -
Max 50 45 5 0.1 0.2 0.1 0.2
Unit V V V A A A A
Per transistor; for the PNP transistor with negative polarity
-
60 60 0.2 0.6
V V A A
[1] [2]
9 3 1.7 290 400 150 +150 +150
A A A mW mW C C C
total power dissipation junction temperature ambient temperature storage temperature
Tamb 25 C
-65 -65
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
3 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
500 Ptot (mW) 400
(1)
006aaa909
300
(2)
200
100
0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6. Symbol Device Rth(j-a) thermal resistance from junction to ambient in free air
[1] [2]
Thermal characteristics Parameter Conditions Min Typ Max 430 312 Unit K/W K/W
[1] [2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
4 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0
006aaa910
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0
006aaa911
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
5 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
7. Characteristics
Table 7. Characteristics Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A Min Typ Max 50 10 100 Unit nA A nA Symbol Parameter ICBO collector-base cut-off current emitter-base cut-off current DC current gain TR1 and TR3 (NPN) VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 100 mA VCE = 5 V; IC = 200 mA TR2 (PNP) VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 100 mA VCE = 5 V; IC = 200 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 200 mA; IB = 20 mA VBEsat base-emitter saturation IC = 10 mA; IB = 0.5 mA voltage IC = 100 mA; IB = 5 mA IC = 200 mA; IB = 20 mA VBE VF IR trr VFR base-emitter voltage forward voltage reverse current reverse recovery time forward recovery voltage delay time rise time turn-on time storage time fall time turn-off time
Pulse test: tp 300 s; 0.02. When switched from IF = 400 mA to IR = 400 mA; RL = 100 ; measured at IR = 40 mA. When switched from IF = 400 mA; tr = 30 ns.
Per transistor; for the PNP transistor with negative polarity
IEBO hFE
200 95 24 200 95 24 [1]
320 165 40 270 120 45 70 200 350 0.74 0.91 1 660 -
450 450 200 400 500 1.2 1.1 100 100 6 2 mV mV mV V V V mV V nA A ns V
VCE = 5 V; IC = 2 mA IF = 200 mA VR = 60 V VR = 60 V; Tj = 150 C
[2] [3]
Diode (D1) -
Transistor 1 (TR1) td tr ton ts tf toff
[1] [2] [3]
IC = 0.05 A; IBon = 2.5 mA; IBoff = -2.5 mA
-
12 78 90 853 205 1058
-
ns ns ns ns ns ns
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
6 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
500 hFE 400
(2) (1)
006aaa912
0.20 IC (A) 0.16
006aaa913
IB (mA) = 5.0 4.5 4.0
300
0.12
200
(3)
0.08
100
0.04
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 VCE (V) 5
0 10-1
1
10
102 IC (mA)
103
0
VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values
1.1 VBE (V) 0.9
(1)
Fig 5. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values
1.2 VBEsat (V) 1.0
006aaa915
006aaa914
(1)
0.7
(2)
0.8
(2)
0.5
(3)
0.6
(3)
0.3 10-2
10-1
1
10
102 103 IC (mA)
0.4 10-1
1
10
102 IC (mA)
103
VCE = 5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 6. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values
Fig 7. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
7 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
1
006aaa916
1
006aaa917
VCEsat (V)
VCEsat (V)
10-1
(1) (2) (3)
10-1
(1) (2)
(3)
10-2 10-1
1
10
102 IC (mA)
103
10-2 10-1
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
8. Test information
RC
VCC
VBB oscilloscope
(probe) 1.5 k R2 RB TR1 R1
D1
DUT VO
R4 (probe) 4.5 k
oscilloscope
VI
TR2
TR3 R3
006aaa918
IC = 0.05 A; IBon = 2.5 mA; IBoff = -2.5 mA; R1 = 50 ; R2 = 1 k; R3 = 1 k; R4 = 1 k; RB = 1.5 k; RC = 150
Fig 10. Test circuit for switching times per TR1
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
8 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
9. Package outline
3.1 2.7 6 5 4 0.6 0.2 1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 11. Package outline SOT457 (SC-74)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMD9050D Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
9 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
11. Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions in mm
Fig 12. Reflow soldering footprint
5.30
solder lands 5.05 0.45 1.45 4.45 solder resist occupied area
1.40 4.30
msc423
Dimensions in mm
Fig 13. Wave soldering footprint
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
10 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
12. Revision history
Table 9. Revision history Release date 20061127 Data sheet status Product data sheet Change notice Supersedes Document ID PMD9050D_1
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
11 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
PMD9050D_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 27 November 2006
12 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2006 Document identifier: PMD9050D_1

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